r07ds0049ej0400 rev.4.00 page 1 of 6 jul 22, 2010 preliminary datasheet rjk5003dpd silicon n channel power mos fet high speed power switching use features ? v dss : 500 v ? r ds(on) : 1.5 ? (max.) ? i d : 5 a ? surface mount package (mp-3a) outline renesas package code: prss0004zg-a ( package name : mp-3a) 1 1 1. gate 2. drain 3. source 4. drain 3 3 2, 4 2 4 applications ? lighting ballast, smps, etc. maximum ratings (tc = 25c) parameter symbol ratings unit conditions drain to source voltage v dss 500 v v gs = 0 v gate to source voltage v gss ? 30 v v ds = 0 v drain current i d 5 a drain peak current i d (pulse) note1 20 a avalanche current i ap 5 a l = 200 ? h channel dissipation pch 62.5 w channel temperature tch 150 ?c storage temperature tstg ?55 to +150 ?c channel to case thermal impedance ? ch-c 2.0 ? c/w channel to case note: 1. pulse width limited by safe operating area. r07ds0049ej0400 (previous: rej03g0580-0300) rev.4.00 jul 22, 2010 not recommend for new design
rjk5003dpd preliminary r07ds0049ej0400 rev.4.00 page 2 of 6 jul 22, 2010 electrical characteristics (tch = 25c) parameter symbol min. typ. max. unit test conditions drain to source breakdown voltage v (br)dss 500 ? ? v i d = 1 ma, v gs = 0 v zero gate voltage drain current i dss ? ? 1 ma v ds = 500 v, v gs = 0 v gate to source leak current i gss ? ? ? 0.1 ? a v gs = ? 30 v, v ds = 0 v gate to source cutoff voltage v gs(off) 3.0 3.5 4.0 v i d = 1 ma, v ds = 10 v static drain to source on state resistance r ds(on) ? 1.3 1.5 ? i d = 2 a, v gs = 10 v note2 input capacitance ciss ? 550 ? pf output capacitance coss ? 60 ? pf reverse transfer capacitance crss ? 10 ? pf v ds = 25 v, v gs = 0 v, f = 1 mhz turn-on delay time t d(on) ? 20 ? ns rise time t r ? 20 ? ns turn-off delay time t d(off) ? 60 ? ns fall time t f ? 25 ? ns v dd = 200 v, i d = 2 a, v gs = 10 v r g = 25 ? body-drain diode forward voltage v df ? 1.0 1.5 v i f = 2 a, v gs = 0 v note2 note: 2. pulse test not recommend for new design
rjk5003dpd preliminary r07ds0049ej0400 rev.4.00 page 3 of 6 jul 22, 2010 main characteristics 0 2 4 6 8 10 048121620 0 1 2 3 4 5 0246810 power vs. temperature derating case temperature tc (c) channel dissipation pch (w) maximum safe operating area drain to source voltage v ds (v) drain current i d (a) typical output characteristics drain current i d (a) drain to source voltage v ds (v) typical output characteristics drain current i d (a) drain to source voltage v ds (v) 0 10 20 30 40 50 60 70 0 50 100 150 200 p ds = 62.5 w tc = 25c pulse test tc = 25c pulse test 5 v 5 v 4v 10 v 7 v v gs = 20 v 6 v 10 v 7 v v gs = 20 v 6 v 4 v 0 4 8 12 16 20 0 4 8 12 16 20 0 0.8 1.6 2.4 3.2 4 drain to source saturation voltage vs. gate to source voltage (typical) gate to source voltage v gs (v) drain to source saturation voltage v ds(on) (v) static drain to source on state resistance vs. drain current (typical) drain current i d (a) drain to source on state resistance r ds(on) ( ) i d = 8 a tc = 25c pulse test 5 a 3 a v gs = 10 v 20 v tc = 25c pulse test 10 0 10 ?1 10 1 10 2 0.01 0.1 1 10 100 1 10 100 1000 pw = 10 s 100 s dc tc = 25c single pulse operation in this area is limited by r ds(on) not recommend for new design
rjk5003dpd preliminary r07ds0049ej0400 rev.4.00 page 4 of 6 jul 22, 2010 10 1 10 2 2 3 5 7 10 3 2 3 5 7 transfer characteristics (typical) gate to source voltage v gs (v) drain current i d (a) switching characteristics (typical) drain to source voltage v ds (v) capacitance vs. drain to source voltage (typical) drain current i d (a) capacitance (pf) switching time (ns) 10 0 23 57 10 1 t d(off) t r tch = 25c v dd = 200 v v gs = 10 v r g = 25 pulse test t f t d(on) 0 4 8 12 16 01620 128 424 gate to source voltage vs. gate charge (typical) gate charge qg (nc) gate to source voltage v gs (v) reverse drain current vs. source to drain voltage characteristics (typical) source to drain voltage v sd (v) source current i dr (a) v ds = 100 v 200 v 400 v tch = 25c i d = 5 a 0.4 0.6 0.8 1.0 1.2 1.4 ?75 ?25 25 75 125 175 channel temperature tch (c) breakdown voltage vs. channel temperature (typical) v gs = 0 v i d = 1 ma drain to source breakdown voltage v (br)dss (tc) drain to source breakdown voltage v ( br)dss (25c) 0 2 4 6 8 10 0246 810 tc = 25c v ds = 10 v pulse test 0 2 4 6 8 10 0 0.4 0.8 1.2 1.6 2 v gs = 0 v pulse test ta = 25c 10 1 10 2 10 3 10 0 10 0 10 1 10 2 10 3 ciss coss crss tch = 25c f = 1 mhz v gs = 0 v not recommend for new design
rjk5003dpd preliminary r07ds0049ej0400 rev.4.00 page 5 of 6 jul 22, 2010 10 ?1 10 0 2 3 4 5 7 10 1 2 3 4 5 7 ?75 ?25 25 75 125 175 10 5 2 1 0.5 0.2 100 m1 10 100 1 m10 m 0.1 channel t emperature tch (c) gate to source cutoff voltage vs. channel t emperature (typical) gate to source cutoff voltage v gs(off) (v) pulse width pw (s) static drain to source on state resistance vs. channel t emperature (typical) channel t emperature tch (c) v gs = 10 v i d = 2 a pulse test d = 1 0.5 0.2 0.1 0.01 0.02 0.05 single pulse drai n to source on state resi stance r ds(on) (tc) drai n to source on state resi stance r ds(on) (25c) t r t d(on) vin 90% 90% 10% 10% vout t d(off) 90% 10% t f vin monitor d.u.t. r l v dd vout monitor r g switching time measurement circuit switching waveform p dm pw t d = pw t 0 1.0 2.0 3.0 4.0 5.0 ?75 ? 25 25 75 125 175 v ds = 10 v i d = 1 ma normalized transient thermal i mpedance s (t) normalized transient thermal impedance vs. pulse width not recommend for new design
rjk5003dpd preliminary r07ds0049ej0400 rev.4.00 page 6 of 6 jul 22, 2010 package dimensions sc-63 0.32g mass[typ.] ? prss000 4zg-a renesas code jeita package code previous code unit: mm 10.4max 1max 0.5 0 . 2 0.1 0 . 1 0.5 0 . 2 0.76 0.76 0 . 2 2.3 0 . 2 5.3 0 . 2 6.6 1 .4 0 . 2 6.1 0 . 21 0 . 2 2.3 2.5min 2.3 1 package name mp-3a ordering information part name quantity shipping container rjk5003dpd-00-j2 3000 pcs taping not recommend for new design
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